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FGB30N6S2DT
기술:
FGB30N6S2DT datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
범주:
이산 반도체
상술
Part Number:
FGB30N6S2DT
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
FGB30N6S2DT More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rise Time:
10 ns
Current Rating:
45 A
Power Dissipation:
167 W
Element Configuration:
Single
Max Power Dissipation:
167 W
Max Operating Temperature:
150 °C
Collector Emitter Voltage (VCEO):
600 V
Collector Emitter Saturation Voltage:
1.95 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
691 In Stock
Applications:
Aerospace & defense
Medical
TV
Packaging:
Tape & Reel (TR)
Case/Package:
TO-263-3
Number of Pins:
3
Voltage Rating (DC):
600 V
Max Collector Current:
45 A
Reverse Recovery Time:
35 ns
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
600 V
모델 번호:
FGB30N6S2DT
소개
FGB30N6S2DT Overview\\nFGB30N6S2DT is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have FGB30N6S2DT high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. FGB30N6S2DT is
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