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BFU710F,115
기술:
BFU710F,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP Semiconductors stock available at Rozee
범주:
이산 반도체
상술
Part Number:
BFU710F,115
Manufacturer:
NXP Semiconductors
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFU710F,115 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.61
Remark:
Manufacturer: NXP Semiconductors.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
14 dB
hFE Min:
200
Frequency:
110 GHz
Schedule B:
8541210080
Output Power:
136 mW
Contact Plating:
Tin
Number of Elements:
1
Max Breakdown Voltage:
2.8 V
Max Power Dissipation:
136 mW
Min Operating Temperature:
-65 °C
Continuous Collector Current:
10 mA
Collector Emitter Voltage (VCEO):
2.8 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
8190 In Stock
Applications:
Tablets
Mount:
Surface Mount
Polarity:
NPN
Packaging:
Digi-Reel®
Case/Package:
SOT-343
Number of Pins:
4
Power Dissipation:
136 mW
Transition Frequency:
43 GHz
Max Collector Current:
10 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1 V
Collector Base Voltage (VCBO):
10 V
Collector Emitter Breakdown Voltage:
2.8 V
모델 번호:
BFU710F,115
소개
BFU710F,115 Overview\\\\nBFU710F,115 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFU710F,115 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BFU710F,115
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