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BFR193WE6327
기술:
BFR193WE6327 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
범주:
이산 반도체
상술
Part Number:
BFR193WE6327
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFR193WE6327 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.08
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
16 dB
Polarity:
NPN
Case/Package:
SOT-323
Current Rating:
65 mA
Power Dissipation:
580 mW
Voltage Rating (DC):
12 V
Element Configuration:
Single
Max Collector Current:
80 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Emitter Voltage (VCEO):
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
3060 In Stock
Applications:
Power delivery
Mount:
Surface Mount
Frequency:
8 GHz
Max Frequency:
8 GHz
Number of Pins:
3
Number of Elements:
1
Transition Frequency:
8 GHz
Max Breakdown Voltage:
12 V
Max Power Dissipation:
580 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
12 V
모델 번호:
BFR193WE6327
소개
BFR193WE6327 Overview\\\\nBFR193WE6327 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFR193WE6327 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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