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HN4B01JE(TE85L,F)
기술:
HN4B01JE(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
범주:
이산 반도체
상술
Part Number:
HN4B01JE(TE85L,F)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN4B01JE(TE85L,F) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.39
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Cut Tape (CT)
Transition Frequency:
80 MHz
Max Breakdown Voltage:
50 V
Max Power Dissipation:
100 mW
Max Operating Temperature:
150 °C
Collector Base Voltage (VCBO):
60 V
Collector Emitter Breakdown Voltage:
50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
2882 In Stock
Applications:
Data storage
Datacom module
Test & measurement
Polarity:
NPN, PNP
Case/Package:
SOT-553
Element Configuration:
Dual
Max Collector Current:
150 mA
Gain Bandwidth Product:
80 MHz
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
250 mV
모델 번호:
HN4B01JE ((TE85L,F)
소개
HN4B01JE(TE85L,F) Overview\\\\nHN4B01JE(TE85L,F) is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN4B01JE(TE85L,F) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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